HOME > Article > DetailElectron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier DiodesJun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi. Journal of Electronic Materials 49 [9] 5196-5204. 2020.https://doi.org/10.1007/s11664-020-08081-2 NIMS author(s)CHEN, JunYI, WeiIWANADE, AkioKIMURA, TakashiOHKUBO, TadakatsuFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-08-18 03:00:20 +0900Updated at: 2024-04-02 00:56:10 +0900
