Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes | SAMURAI, NIMS Researchers Directory Service

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Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi.

Journal of Electronic Materials 49 [9] 5196-5204. 2020.

https://doi.org/10.1007/s11664-020-08081-2

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Created at: 2020-08-18 03:00:20 +0900 Updated at: 2026-10-07 04:18:19 +0900

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