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Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films

CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri.

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    Created at: 2022-10-21 22:42:20 +0900 Updated at: 2022-10-21 22:42:20 +0900

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