Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada.

Applied Physics Letters 92 [26] 262103. 2008.

https://doi.org/10.1063/1.2952829

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作成時刻: 2016-05-24 15:33:32 +0900更新時刻: 2024-04-01 18:27:08 +0900

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