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著者名Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada.
タイトルComparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
掲載誌名Applied Physics Letters 92 26 262103
ISSN: 00036951 10773118
発表年2008
言語English
DOI10.1063/1.2952829
ESIでのカテゴリPHYSICS
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