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Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada.
Applied Physics Letters 92 [26] 262103. 2008.
https://doi.org/10.1063/1.2952829

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