publication_type publication_year number author title doi reported_at Proceeding 2015 1 Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique https://doi.org/10.4028/www.scientific.net/ssp.242.35 2024-04-20 18:33:44 +0900 Proceeding 2015 2 Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto Control of extended defects in cast and seed cast Si ingots for photovoltaic application https://doi.org/10.1002/pssc.201400230 2024-04-20 18:33:44 +0900 Proceeding 2015 3 Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto 50 cm size Seed Cast Si ingot growth and its characterization https://doi.org/10.4028/www.scientific.net/ssp.242.30 2024-04-20 18:33:44 +0900 Proceeding 2014 1 CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, Atsushi Ogura, SEKIGUCHI, Takashi 2024-04-20 18:33:44 +0900 Proceeding 2013 1 Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto https://doi.org/10.4028/www.scientific.net/ssp.205-206.89 2024-04-20 18:33:44 +0900 Proceeding 2013 2 CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi An investigation of the impact of crystal orientation on dislocation distribution in multicrystalline silicon 2024-04-20 18:33:44 +0900 Proceeding 2012 1 陳君 https://doi.org/10.4028/www.scientific.net/msf.725.123 2024-04-20 18:33:44 +0900 Proceeding 2012 2 Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe https://doi.org/10.4028/www.scientific.net/msf.725.153 2024-04-20 18:33:44 +0900 Proceeding 2012 3 Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi https://doi.org/10.4028/www.scientific.net/msf.725.157 2024-04-20 18:33:44 +0900 Proceeding 2011 1 Kazuhiro Kumagai, Yuanzhao Yao, Jun Chen, Takashi Sekiguchi Image instability during the electrical measurement in scanning electron microscope https://doi.org/10.1002/pssc.201000003 2024-04-20 18:33:44 +0900 Proceeding 2010 1 SEKIGUCHI, Takashi, LEE, Woong, CHEN, Jun, CHEN, Bin D-line emission from small angle grain boundaries in multicrystalline Si 2024-04-20 18:33:44 +0900 Proceeding 2010 2 CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro ＥＢＩＣによてHigh-kゲートスタック構造の欠陥の研究 2024-04-20 18:33:44 +0900 Proceeding 2010 3 CHEN, Jun, CHEN, Bin, LEE, Woong, Ｍａｓａｙｕｋｉ　Ｆｕｋｕｚａｗａ, Masayoshi Yamada, SEKIGUCHI, Takashi Grain Boundaries in Multicrystalline Si 2024-04-20 18:33:44 +0900 Proceeding 2010 4 SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs https://doi.org/10.4028/www.scientific.net/156-158.461 2024-04-20 18:33:44 +0900 Proceeding 2009 1 CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada Electron Beam Induced Current Investigation of Stress-Induced Leakage and Breakdown Processes in High-k stacks 2024-04-20 18:33:44 +0900 Proceeding 2009 2 FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami Siナノワイヤ中への不純物ドーピングと不純物の偏析挙動 2024-04-20 18:33:44 +0900 Proceeding 2008 1 CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada Electron-beam-induced current characterization of high-k dielectrics 2024-04-20 18:33:44 +0900 Proceeding 2008 2 CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada CHARACTERIZATION OF LEAKAGE BEHAVIORS OF HIGH-K GATE STACKS BY ELECTRON-BEAM-INDUCED CURRENT 2024-04-20 18:33:44 +0900 Proceeding 2008 3 CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Oyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, FILIPPOFabbri EBIC study of dislocations and stacking faults in 4H-SiC homoepitaxial films 2024-04-20 18:33:44 +0900 Proceeding 2008 4 SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong Electrical and optical activities of small-angle grain boundaries in multicrystalline silicon 2024-04-20 18:33:44 +0900 Proceeding 2007 1 CHEN, Jun, SEKIGUCHI, Takashi, Yang Deren Electron Beam Induced Current Study of Grain Boundaries in Multicrystalline Si 2024-04-20 18:33:44 +0900 Proceeding 2007 2 FUKATA, Naoki, S. Matsudhits, CHEN, Jun, SEKIGUCHI, Takashi, K. Murakami シリコンナノワイヤへの不純物ドーピング 2024-04-20 18:33:44 +0900 Proceeding 2007 3 Yuan, Xiaoli, CHEN, Jun, Ri Sungi , Ito Shun, SEKIGUCHI, Takashi Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC 2024-04-20 18:33:44 +0900 Proceeding 2007 4 FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami レーザーアブレーションにより生成されたSiナノワイヤ中のフォノン閉じ込め効果と不純物ドーピング 2024-04-20 18:33:44 +0900 Proceeding 2007 5 FUKATA, Naoki, S. MAtsushita, T. Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, N. Uchida, K. Murakami レーザーアブレーションにより生成されたPドープシリコンナノワイヤ中のPドナーおよび欠陥の水素パッシベーション 2024-04-20 18:33:44 +0900 Proceeding 2007 6 CHEN, Jun, SEKIGUCHI, Takashi, ITO Shun, YANG Deren Carrier recombination activities and structural properties of small-angle boundaries in multicrystalline silicon 2024-04-20 18:33:44 +0900 Proceeding 2007 7 SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, UMEZAWA, Naoto, OHMORI, Kenji, CHIKYOW, Toyohiro, Hasunuma Ryu, Yamabe Kikuo, Inumiya Seiji, Nara Yasuo Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique 2024-04-20 18:33:44 +0900 Proceeding 2007 8 FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, Shun Ito, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami レーザーアブレーション法により生成したSiナノ細線中へのキャリアドーピング 2024-04-20 18:33:44 +0900 Proceeding 2004 1 謝栄国, SEKIGUCHI, Takashi, CHEN, Jun, 楊徳仁, 伊藤俊 2024-04-20 18:33:44 +0900