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(Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method)

4th NIMS International Conference on Photonic Processes in Semic. 2006.

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    作成時刻 :2017-01-08 04:44:09 +0900 更新時刻 :2017-07-10 19:37:37 +0900

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