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著者名CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, CHIKYOW, Toyohiro.
タイトルObservation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method
会議名4th NIMS International Conference on Photonic Processes in Semic
発表年2006
言語English
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