HOME > 口頭発表 > 書誌詳細(Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method)陳 君, 関口 隆史, 深田 直樹, 知京 豊裕. 4th NIMS International Conference on Photonic Processes in Semic. 2006.NIMS著者陳 君深田 直樹知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻 :2017-01-08 04:44:09 +0900 更新時刻 :2017-07-10 19:37:37 +0900