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(Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method)
4th NIMS International Conference on Photonic Processes in Semic. 2006.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:44:09 +0900Updated at: 2017-07-10 19:37:37 +0900