Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs
| 著者 | SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar. |
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| 掲載誌名 | SOLID STATE PHENOMENA 461-466 |
| 出版社 | |
| 出版年 | 2010 |
| 言語 | English |
| DOI | https://doi.org/10.4028/www.scientific.net/156-158.461 |