HOME > 会議録 > 書誌詳細Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current techniqueSEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, UMEZAWA, Naoto, OHMORI, Kenji, CHIKYOW, Toyohiro, Hasunuma Ryu, Yamabe Kikuo, Inumiya Seiji, Nara Yasuo. Solid State Phenomena 449-454. 2007.NIMS著者陳 君深田 直樹知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-02-27 01:21:51 +0900 更新時刻: 2017-03-17 03:22:01 +0900
