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著者名CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada.
タイトルUnderstanding of carrier transport in MOS device with high-k gate dielectric: an electron-beam-induced current study of leakage sites
会議名2008 International Workshop on Dielectric Thin Films (IWDTF-08)
発表年2008
言語English
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