HOME > Profile > HISHITA, Shunichi
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- 305-0047 1-2-1 Sengen Tsukuba Ibaraki JAPAN [Access]
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機能材料・デバイス 薄膜・表面界面物性 イオンビーム
PublicationsNIMS affiliated publications since 2004.
Research papers
- Shunichi Hishita, Petr Janeček, Hajime Haneda. Epitaxial growth of tin oxide film on TiO2(110) using molecular beam epitaxy. Journal of Crystal Growth. 312 [20] (2010) 3046-3049 10.1016/j.jcrysgro.2010.07.012
- Shunichi Hishita. Ion beam synthesis of SiC thin films. Journal of Electroceramics. 24 [2] (2010) 97-103 10.1007/s10832-008-9540-0
- Ramu Pasupathi Sugavaneshwar, Thang Duy Dao, Karuna Kar Nanda, Tadaaki Nagao, Shunichi Hishita, Isao Sakaguchi. Enhanced photocatalytic activity of ultra-high aspect ratio ZnO nanowires due to Cu induced defects. Radiation Effects and Defects in Solids. 170 [12] (2015) 939-944 10.1080/10420150.2015.1123258
Proceedings
- HISHITA, Shunichi, JANECEK, Petr, HANEDA, Hajime. Epitaxial Growth of SnO2 Film on Sn-doped TiO2(110). VACUUM. 2009, 597-601
- SAKAGUCHI, Isao, PARK, Daechul, TAKATA, YOSHIAKI, HISHITA, Shunichi, OHASHI, Naoki, HANEDA, Hajime, MITSUHASHI, Takefumi. An effect of annealing on In implanted ZnO. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. , -
- PARK, Daechul, SAKAGUCHI, Isao, OHASHI, Naoki, HISHITA, Shunichi, HANEDA, Hajime, 伊藤純一. COMPOSITIONAL IMAGING OF THE “CORE-SHELL” STRUCTURE IN BaTiO3 BASED CERAMICS. The proceeding of MRS 2002 fall meeting. , -
Presentations
- HISHITA, Shunichi, SAKAGUCHI, Isao, HANEDA, Hajime. Evolution of Surface Morphology of Rutile Single Crystal by Ion Implantation. 27th International Korea-Japan Seminar on Ceramics . 2010
- HANEDA, Hajime, SAKAGUCHI, Isao, MATSUMOTO, Kenji, OGINO, Tsuyoshi, HISHITA, Shunichi, ADACHI, Yutaka, OGAKI, Takeshi, OHASHI, Naoki. Diffusion Phenomena in ZnO Thin Films Deposited by PLD Method. ICC 3rd International Congress on Ceramics. 2010
- 福田真也, 森俊樹, 森澤邦友, ISHIOKA, Kunie, KITAJIMA, Masahiro, SAKAGUCHI, Isao, HISHITA, Shunichi, 村上浩一. シリコン中の水素の深さ濃度分布と局所振動モードの関係. 2002秋季第63回応用物理学会学術講演会. 2002
Patents
- No. 1699916 酸化亜鉛バリスタの製造方法 (1992)
- No. 4441605 半導体基板とその製造方法 (2010)
- No. 2931933 酸化亜鉛バリスタの製造方法 (1999)
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