- Address
- 305-0047 茨城県つくば市千現1-2-1 [アクセス]
- プロフィール
- タグクラウド
- 人のつながり
研究内容
- Keywords
機能材料・デバイス 薄膜・表面界面物性 イオンビーム
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- Shunichi Hishita, Petr Janeček, Hajime Haneda. Epitaxial growth of tin oxide film on TiO2(110) using molecular beam epitaxy. Journal of Crystal Growth. 312 [20] (2010) 3046-3049 10.1016/j.jcrysgro.2010.07.012
- Shunichi Hishita. Ion beam synthesis of SiC thin films. Journal of Electroceramics. 24 [2] (2010) 97-103 10.1007/s10832-008-9540-0
- Ramu Pasupathi Sugavaneshwar, Thang Duy Dao, Karuna Kar Nanda, Tadaaki Nagao, Shunichi Hishita, Isao Sakaguchi. Enhanced photocatalytic activity of ultra-high aspect ratio ZnO nanowires due to Cu induced defects. Radiation Effects and Defects in Solids. 170 [12] (2015) 939-944 10.1080/10420150.2015.1123258
会議録
- HISHITA, Shunichi, JANECEK, Petr, HANEDA, Hajime. Epitaxial Growth of SnO2 Film on Sn-doped TiO2(110). VACUUM. 2009, 597-601
- SAKAGUCHI, Isao, PARK, Daechul, TAKATA, YOSHIAKI, HISHITA, Shunichi, OHASHI, Naoki, HANEDA, Hajime, MITSUHASHI, Takefumi. An effect of annealing on In implanted ZnO. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. , -
- PARK, Daechul, SAKAGUCHI, Isao, OHASHI, Naoki, HISHITA, Shunichi, HANEDA, Hajime, 伊藤純一. COMPOSITIONAL IMAGING OF THE “CORE-SHELL” STRUCTURE IN BaTiO3 BASED CERAMICS. The proceeding of MRS 2002 fall meeting. , -
口頭発表
- HISHITA, Shunichi, SAKAGUCHI, Isao, HANEDA, Hajime. Evolution of Surface Morphology of Rutile Single Crystal by Ion Implantation. 27th International Korea-Japan Seminar on Ceramics . 2010
- HANEDA, Hajime, SAKAGUCHI, Isao, MATSUMOTO, Kenji, OGINO, Tsuyoshi, HISHITA, Shunichi, ADACHI, Yutaka, OGAKI, Takeshi, OHASHI, Naoki. Diffusion Phenomena in ZnO Thin Films Deposited by PLD Method. ICC 3rd International Congress on Ceramics. 2010
- 福田真也, 森俊樹, 森澤邦友, 石岡 邦江, 北島 正弘, 坂口 勲, 菱田 俊一, 村上浩一. シリコン中の水素の深さ濃度分布と局所振動モードの関係. 2002秋季第63回応用物理学会学術講演会. 2002
特許
- 特許第1699916号 酸化亜鉛バリスタの製造方法 (1992)
- 特許第4441605号 半導体基板とその製造方法 (2010)
- 特許第2931933号 酸化亜鉛バリスタの製造方法 (1999)
第二期開発予定
第二期開発予定