HOME > 論文 > 書誌詳細Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substratesParhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Microelectronic Engineering 85 [7] 1642-1646. 2008.https://doi.org/10.1016/j.mee.2008.04.001 NIMS著者長田 貴弘知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:39:47 +0900 更新時刻: 2026-10-01 04:39:22 +0900
