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著者名Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow.
タイトルBias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy
掲載誌名Japanese Journal of Applied Physics 54 [6S1] 06FG01
ISSN: 00214922 13474065
発表年2015
言語English
ESIでのカテゴリPHYSICS
DOIhttps://doi.org/10.7567/jjap.54.06fg01
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