Effects of interface formation process on electronic properties of n-type Ti<sub>0.3</sub>Zn<sub>0.7</sub>O<sub>1.3</sub>/p-type Si stack structure | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effects of interface formation process on electronic properties of n-type Ti_0.3Zn_0.7O_1.3/p-type Si stack structure

Kenta Ogawa, Toyohiro Chikyow, Yuki Daimon, Atsushi Ogura, Takahiro Nagata.

Japanese Journal of Applied Physics 64 [5] 05SP25. 2025.

https://doi.org/10.35848/1347-4065/add0be

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作成時刻: 2025-09-10 03:12:20 +0900 更新時刻: 2026-01-15 04:34:04 +0900

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