Study of Local Band Bending and Chemical Change of n-Channel In2O3 Thin-Film Transistor Under Gate and Source Voltage Stress By Using Operando Hard X-ray Photoelectron Spectroscopy
HAXPES2024, the 10th International Conference on Hard X-ray Photoelectron Spectroscopy. 2024年06月04日-2024年06月07日.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2024-11-29 03:18:09 +0900 更新時刻: 2024-11-29 03:18:09 +0900