Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress
IEEE EDTM 2019. 2019.
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作成時刻: 2019-04-02 19:23:15 +0900更新時刻: 2019-04-02 19:23:15 +0900