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Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress

栗島 一徳, NABATAME, Toshihide, ONAYA, Takashi, TSUKAGOSHI, Kazuhito, OHI, Akihiko, IKEDA, Naoki, NAGATA, Takahiro, 小椋 厚志.
IEEE EDTM 2019. March 13, 2019-March 15, 2019.

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Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-04-02 19:23:15 +0900Updated at: 2019-04-02 19:23:15 +0900

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