Effects of interface formation process on tunneling current components of n-type Ti <sub>0.3</sub> Zn <sub>0.7</sub> O <sub>1.3</sub> /p-type Si stack structure | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effects of interface formation process on tunneling current components of n-type Ti _0.3 Zn _0.7 O _1.3 /p-type Si stack structure

Kenta Ogawa, Toyohiro Chikyow, Naomi Sawamoto, Atsushi Ogura, Takahiro Nagata.

Japanese Journal of Applied Physics 65 [6] 06SP31. 2026.

https://doi.org/10.35848/1347-4065/ae4fcf

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作成時刻: 2026-04-04 03:07:54 +0900 更新時刻: 2026-05-05 04:32:11 +0900

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