The electrical conductivity of cubic (In<sub>1−x </sub>Ga<sub> x </sub>)<sub>2</sub>O<sub>3</sub> films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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The electrical conductivity of cubic (In_1−xGa_x)₂O₃ films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer

Alexandra Papadogianni, Takahiro Nagata, Oliver Bierwagen.

Japanese Journal of Applied Physics 61 [4] 045502. 2022.

https://doi.org/10.35848/1347-4065/ac4ec7

Open Access IOP Publishing (Publisher)

NIMS著者

長田貴弘

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-05-28 03:12:22 +0900更新時刻: 2025-01-09 08:32:36 +0900

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