HOME > 論文 > 書誌詳細Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer depositionTakashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Microelectronic Engineering 215 111013. 2019.https://doi.org/10.1016/j.mee.2019.111013 NIMS著者女屋 崇生田目 俊秀大井 暁彦池田 直樹長田 貴弘Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-07-12 03:00:20 +0900 更新時刻: 2026-09-29 05:05:13 +0900
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