Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor
AVS 21st International Conference on Atomic Layer Deposition (ALD 2021) / https://ald2021.avs.org/. 2021.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2021-09-18 03:00:21 +0900更新時刻: 2021-09-18 03:00:21 +0900