HOME > 論文 > 書誌詳細Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)(NA)Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita. Nano Letters 24 [13] 3978-3985. 2024.https://doi.org/10.1021/acs.nanolett.4c00482 NIMS著者蔡 宇華長田 貴弘山下 良之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2024-04-05 03:11:55 +0900更新時刻: 2024-04-06 03:11:57 +0900
