NA

Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita; Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita

doi:10.1021/acs.nanolett.4c00482

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Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)
(NA)

Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita.

Nano Letters 24 [13] 3978-3985. 2024.

https://doi.org/10.1021/acs.nanolett.4c00482

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

作成時刻: 2024-04-05 03:11:55 +0900 更新時刻: 2026-10-08 09:02:53 +0900

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)(NA)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)
(NA)