Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga<sub>2</sub>O<sub>3</sub>(001)

Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita; Yuhua Tsai; Yusuke Hashimoto; ZeXu Sun; Takuya Moriki; Takashi Tadamura; Takahiro Nagata; Piero Mazzolini; Antonella Parisini; Matteo Bosi; Luca Seravalli; Tomohiro Matsushita; Yoshiyuki Yamashita

doi:10.1021/acs.nanolett.4c00482

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)
(NA)

Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita.

Nano Letters 24 [13] 3978-3985. 2024.

https://doi.org/10.1021/acs.nanolett.4c00482

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

Created at: 2024-04-05 03:11:55 +0900 Updated at: 2026-10-08 09:02:53 +0900

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)(NA)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)
(NA)