Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya; Moon Young Yang; Takahiro Nagata; Seong-Geon Park; Blanka Magyari-Köpe; Toyohiro Chikyow; Keisaku Yamada; Masaaki Niwa; Yoshio Nishi; Kenji Shiraishi

doi:10.1103/physrevb.87.155201

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Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi.

Physical Review B 87 [15] 155201. 2013.

https://doi.org/10.1103/physrevb.87.155201

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作成時刻: 2016-05-24 17:12:48 +0900更新時刻: 2024-04-02 04:08:09 +0900