Influence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel
33rd International Microprocesses and Nanotechnology Conference/https://mnc2020.award-con.com/LOGIN.php. 2020.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2020-12-03 15:05:57 +0900更新時刻: 2020-12-03 15:05:57 +0900