Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated By Low-Temperature ALD Using Ιn-Etcp and H2O&O3
236th ECS Meeting. 2019.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2020-10-18 03:00:18 +0900更新時刻: 2020-10-18 03:00:18 +0900