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著者名Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi.
タイトルSurface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy
掲載誌名Journal of Applied Physics 123 [9] 095701
ISSN: 10897550 00218979
発表年2018
言語English
ESIでのカテゴリ
DOIhttps://doi.org/10.1063/1.5016574
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