HOME > 論文 > 書誌詳細Characterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation(Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface)Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow. ECS Transactions 75 [12] 201-206. 2016.https://doi.org/10.1149/07512.0207ecst NIMS著者山下 良之長田 貴弘知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-01-06 23:16:01 +0900更新時刻: 2024-04-02 00:34:53 +0900