HOME > Article > DetailCharacterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation(Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface)Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow. ECS Transactions 75 [12] 201-206. 2016.https://doi.org/10.1149/07512.0207ecst NIMS author(s)YAMASHITA, YoshiyukiNAGATA, TakahiroCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-01-06 23:16:01 +0900 Updated at :2022-10-22 02:37:01 +0900