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Characterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation
(Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface)

ECS Transactions 75 [12] 201-206. 2016.

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    Created at :2017-01-06 23:16:01 +0900 Updated at :2022-10-22 02:37:01 +0900

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