Electron transport in semiconducting SnO<sub>2</sub>: Intentional bulk donors and acceptors, the interface, and the surface | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface
(Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface)

Oliver Bierwagen, Takahiro Nagata, Mark E. White, Min-Ying Tsai, James S. Speck.

Journal of Materials Research 27 [17] 2232-2236. 2012.

https://doi.org/10.1557/jmr.2012.172

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作成時刻: 2016-05-24 16:50:17 +0900更新時刻: 2024-03-31 12:54:58 +0900

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