Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura.

Applied Physics Letters 117 [23] 232902. 2020.

https://doi.org/10.1063/5.0029709

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作成時刻: 2020-12-15 03:00:18 +0900 更新時刻: 2026-09-29 04:44:06 +0900

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