Study of Local Band Bending in <i>n</i>-Channel In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors under Gate and Drain Voltage Stress Using <i>Operando</i> Hard X-ray Photoelectron Spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Study of Local Band Bending in n-Channel In₂O₃ Thin-Film Transistors under Gate and Drain Voltage Stress Using Operando Hard X-ray Photoelectron Spectroscopy

Ibrahima Gueye, Akira Yasui, Yasumasa Takagi, Atsushi Ogura, Osami Sakata, Takahiro Nagata.

ACS Applied Materials & Interfaces 17 [38] 54241-54253. 2025.

https://doi.org/10.1021/acsami.5c13299

NIMS著者

長田貴弘

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2025-12-09 03:10:04 +0900 更新時刻: 2026-06-15 04:31:00 +0900

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