Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy
International Workshop on Nitride Semiconductors 2016 (IWN2016). 2016.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-26 21:13:50 +0900更新時刻: 2018-06-05 13:58:28 +0900