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著者名IMURA, Masataka, TSUDA, Shunsuke, NAGATA, Takahiro, YANG, Anli, YAMASHITA, Yoshiyuki, YOSHIKAWA, Hideki, KOIDE, Yasuo, KOBAYASHI, Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Ke Wang, Araki Tsutomu, Nanishi Yasushi.
タイトルSurface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy
会議名International Workshop on Nitride Semiconductors 2016 (IWN2016)
発表年2016
言語English
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