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Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy
International Workshop on Nitride Semiconductors 2016 (IWN2016). 2016.
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Created at: 2017-02-26 21:13:50 +0900Updated at: 2018-06-05 13:58:28 +0900