Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe.

AIP Advances 9 [4] 045002. 2019.

https://doi.org/10.1063/1.5088541

Open Access AIP Publishing (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-04-17 03:12:53 +0900更新時刻: 2024-12-08 04:51:24 +0900

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