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Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe.
AIP Advances 9 [4] 045002. 2019.
https://doi.org/10.1063/1.5088541
Open Access AIP Publishing (Publisher)

NIMS author(s)

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    Created at: 2019-04-17 03:12:53 +0900Updated at: 2025-01-09 04:55:01 +0900

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