Ferroelectricity of 300°C Low Temperature Fabricated HfxZr1−xO2 Thin Films by Plasma-Enhanced Atomic Layer Deposition using Hf/Zr Cocktail Precursor

ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, 澤本直美, NAGATA, Takahiro, R. M. Wallace, J. Kim, 小椋厚志.

20th International Conference on Atomic Layer Deposition. 2020.

作成時刻: 2020-11-30 14:06:47 +0900更新時刻: 2020-11-30 14:06:47 +0900