Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress

Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura.

Electron Devices Technology and Manufacturing Conference (EDTM) . 2019.

https://doi.org/10.1109/edtm.2019.8731167

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-08-21 03:00:18 +0900 更新時刻: 2025-05-13 05:19:23 +0900

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