Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress
| 著者 | Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. |
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| 発表誌名 | Electron Devices Technology and Manufacturing Conference (EDTM) |
| 発表年 | 2019 |
| 言語 | English |
| DOI | https://doi.org/10.1109/edtm.2019.8731167 |