Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress | SAMURAI, NIMS Researchers Directory Service

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Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress

Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura.

Electron Devices Technology and Manufacturing Conference (EDTM) . 2019.

https://doi.org/10.1109/edtm.2019.8731167

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-08-21 03:00:18 +0900 Updated at: 2025-11-19 05:10:50 +0900

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