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Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy

IMURA, Masataka, BANAL, Ganipan Ryan, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YANG, Anli, YOSHIKAWA, Hideki, TSUDA, Shunsuke, KOIDE, Yasuo, KOBAYASHI, Keisuke, 山口智広, 金子昌充, 荒木努, 名西やすし.
International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018.

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    作成時刻: 2019-03-04 09:36:12 +0900更新時刻: 2019-03-04 09:36:12 +0900

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