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Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy

IMURA, Masataka, BANALRyan, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YANGAnli, YOSHIKAWA, Hideki, TSUDA, Shunsuke, KOIDE, Yasuo, 小林啓介, 山口智広, 金子昌充, 荒木努, 名西やすし.
International Workshop on Nitride Semiconductors 2018 (IWN2018). November 11, 2018-November 16, 2018.

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Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-03-04 09:36:12 +0900 Updated at: 2019-03-04 09:36:12 +0900

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