Possibility of Above 20-nm-Thick HfxZr1−xO2/ZrO2 and HfxZr1−xO2/HfO2 Bilayers for High Polarization and Breakdown Voltage

ONAYA, Takashi, NABATAME, Toshihide, 井上万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本直美, NAGATA, Takahiro, Jiyoung Kim, 小椋厚志.

51th IEEE Semiconductor Interface Specialists Conference. 2020年12月16日-2020年12月19日.

作成時刻: 2020-12-22 03:00:21 +0900 更新時刻: 2020-12-22 03:00:21 +0900