Ferroelectricity of HfxZr1−xO2 thin films fabricated using plasma-enhanced atomic layer deposition and low temperature annealing process
21th Conference of “Insulating Films on Semiconductors”. 2019.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2019-12-25 03:00:21 +0900更新時刻: 2019-12-25 03:00:21 +0900