Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application
SSDM2018. 2018.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2018-05-10 22:23:53 +0900更新時刻: 2018-06-05 14:20:06 +0900