Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique |

Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique

著者	女屋崇, 生田目俊秀, 澤本直美, 大井暁彦, 池田直樹, 長田貴弘, 小椋厚志.
会議名	49th IEEE Semiconductor Interface Specialists Conference
発表年	2018
言語	Japanese