Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique
49th IEEE Semiconductor Interface Specialists Conference. 2018.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2018-08-25 16:18:36 +0900更新時刻: 2018-08-25 16:18:36 +0900