HOME > Presentation > Detail
Improvement of Ferroelectricity of HfxZr1−xO2 Thin Films by New ZrO2 Nucleation Technique
49th IEEE Semiconductor Interface Specialists Conference. December 05, 2018-December 08, 2018.
NIMS author(s)
_%E5%A5%B3%E5%B1%8B%E5%B4%87.jpg)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-08-25 16:18:36 +0900 Updated at: 2018-08-25 16:18:36 +0900