MOCVD‐Grown MoS
                    <sub>2</sub>
                    Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Shuhong Li; Juiteng Chang; Keisuke Atsumi; Kosei Matsumoto; Itsuki Tanaka; Tomonori Nishimura; Kaito Kanahashi; Takahiro Nagata; Jun Nara; Yoshiki Sakuma; Emi Kano; Nobuyuki Ikarashi; Kosuke Nagashio; Shuhong Li; Juiteng Chang; Keisuke Atsumi; Kosei Matsumoto; Itsuki Tanaka; Tomonori Nishimura; Kaito Kanahashi; Takahiro Nagata; Jun Nara; Yoshiki Sakuma; Emi Kano; Nobuyuki Ikarashi; Kosuke Nagashio

doi:10.1002/adma.73931

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MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio.

Advanced Materials 38 [45] e73931. 2026.

https://doi.org/10.1002/adma.73931

Open Access Wiley (Publisher) Materials Data Repository (MDR)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MDRavailable MOCVD‐Grown MoS <sub>2</sub> Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

作成時刻: 2026-08-19 03:10:17 +0900 更新時刻: 2026-10-21 04:33:00 +0900

MOCVD‐Grown MoS 2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering