MOCVD‐Grown MoS
                    <sub>2</sub>
                    Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Shuhong Li; Juiteng Chang; Keisuke Atsumi; Kosei Matsumoto; Itsuki Tanaka; Tomonori Nishimura; Kaito Kanahashi; Takahiro Nagata; Jun Nara; Yoshiki Sakuma; Emi Kano; Nobuyuki Ikarashi; Kosuke Nagashio; Shuhong Li; Juiteng Chang; Keisuke Atsumi; Kosei Matsumoto; Itsuki Tanaka; Tomonori Nishimura; Kaito Kanahashi; Takahiro Nagata; Jun Nara; Yoshiki Sakuma; Emi Kano; Nobuyuki Ikarashi; Kosuke Nagashio

doi:10.1002/adma.73931

MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio.

Advanced Materials 38 [45] e73931. 2026.

https://doi.org/10.1002/adma.73931

Open Access Wiley (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable MOCVD‐Grown MoS <sub>2</sub> Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Created at: 2026-08-19 03:10:17 +0900 Updated at: 2026-09-20 04:32:25 +0900

MOCVD‐Grown MoS 2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering