Comparison of Reliability of Ferroelectric HfxZr1−xO2 Thin Films Fabricated by Several Processes with Plasma-Enhanced and Thermal Atomic Layer Deposition

ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, N. Sawamoto, H. S. Kim, R. M. Wallace, J. Kim, A. Khosravi, NAGATA, Takahiro, 小椋厚志.

The 19th Annual Non-Volatile Memory Technology Symposium. 2019年10月28日-2019年10月30日.

作成時刻: 2019-12-25 03:00:21 +0900更新時刻: 2019-12-25 03:00:21 +0900