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Comparison of Reliability of Ferroelectric HfxZr1−xO2 Thin Films Fabricated by Several Processes with Plasma-Enhanced and Thermal Atomic Layer Deposition

著者ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, N. Sawamoto, H. S. Kim, R. M. Wallace, J. Kim, A. Khosravi, NAGATA, Takahiro, 小椋 厚志.
会議名The 19th Annual Non-Volatile Memory Technology Symposium