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Comparison of Reliability of Ferroelectric HfxZr1−xO2 Thin Films Fabricated by Several Processes with Plasma-Enhanced and Thermal Atomic Layer Deposition

ONAYA, Takashi, NABATAME, Toshihide, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, N. Sawamoto, H. S. Kim, R. M. Wallace, J. Kim, A. Khosravi, NAGATA, Takahiro, 小椋 厚志.
The 19th Annual Non-Volatile Memory Technology Symposium. October 28, 2019-October 30, 2019.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2019-12-25 03:00:21 +0900Updated at: 2019-12-25 03:00:21 +0900

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