HOME > 論文 > 書誌詳細Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stressRiku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Japanese Journal of Applied Physics 60 [SC] SCCM01. 2021.https://doi.org/10.35848/1347-4065/abe685 NIMS著者生田目 俊秀大井 暁彦池田 直樹長田 貴弘塚越 一仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-03-19 03:00:19 +0900更新時刻: 2024-04-02 05:08:39 +0900
