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Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress

Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura.
Japanese Journal of Applied Physics 60 [SC] SCCM01. 2021.
https://doi.org/10.35848/1347-4065/abe685

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    Created at: 2021-03-19 03:00:19 +0900Updated at: 2024-04-02 05:08:39 +0900

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